A 128-Pixel 0.56THz Sensing Array for Real-Time Near-Field Imaging in 0.13µm SiGe BiCMOS

📋 论文概要

本文提出了一种基于0.13µm SiGe BiCMOS工艺的128像素0.56THz传感阵列，用于实时近场成像。该阵列通过近场操作突破了衍射极限，实现了高分辨率太赫兹成像。

💡 主要创新点

• 首次在硅基工艺中实现128像素的0.56THz近场传感阵列，支持实时成像
• 采用近场技术克服太赫兹成像的衍射极限，提高空间分辨率
• 集成了阵列化传感器和信号处理电路，实现快速扫描

🏷 关键词

📄 原文摘要

Bergonié, Bordeaux, France 4 CNRS, Talence, France 5 University of Bordeaux, Talence, France 1 2 Real-time terahertz video cameras are regarded as key enabler systems for numerous applications. Unfortunately, their spatial resolution is fundamentally restricted by the diffraction limit. Near-field-scanning optical microscopy (NSOM) is used in the THz domain to break through this limit [1]. Recently reported THz near-field sensors based on silicon technology promise significant improvements compared to NSOM with respect to sensor sensitivity, system cost, and scanning time [2,3]. However, only single-pixel implementations have been presented with unmodulated CW sources so far, which limits the sensors dynamic range (DR)

👥 作者与机构

Philipp Hillger1, Ritesh Jain1, Janusz Grzyb1, Laven Mavarani1,

Bernd Heinemann2, Gaetan Mac Grogan3, Patrick Mounaix4, Thomas Zimmer5, Ullrich Pfeiffer1 University of Wuppertal, Wuppertal, Germany IHP, Frankfurt (Oder), Germany 3 Institut