A 1/2.8-inch 24Mpixel CMOS Image Sensor with 0.9μm Unit Pixels Separated by Full-Depth Deep-Trench Isolation

📋 论文概要

本文提出了一种1/2.8英寸的24百万像素CMOS图像传感器，采用0.9微米像素间距，并通过全深度深槽隔离技术分离像素，解决了小像素间的串扰问题，实现了高分辨率成像。该传感器适用于移动设备的高像素密度应用。

💡 主要创新点

• 采用0.9μm超小像素单元，通过全深度深槽隔离实现像素间完全隔离，消除光学和电学串扰。
• 在1/2.8英寸光学格式上集成24Mp分辨率，实现了高像素密度。
• 通过优化的像素设计和工艺，在减小像素尺寸的同时保持了良好的图像质量。

🏷 关键词

📄 原文摘要

Bumsuk Kim, Youngsun Oh, Sunghoon Oh, Byungjun Park, Euiyeol Kim, YunKi Lee, Taesub Jung, Yongwoon Kim, Sukki Yoon, Seokyong Hong, Jesuk Lee, Sangil Jung, Chang-Rok Moon, Yongin Park, Duckhyung Lee, Duckhyun Chang Samsung Electronics, Hwaseong, Korea CMOS image sensors (CIS) have attracted much attention for the emerging mobile market, and the demand of high-resolution image sensors in mobile applications continues to increase [1-3]. For this reason, pixel pitch has been reduced down to 1.0μm for mass production. Nevertheless, CISs are continuously scaling down to meet the strong demand for higher-resolution images. However, when the pixel size is reduced down to the sub-micron regime (possibly smaller than the diffraction limit), it is very important to consider photo sensitivity and crosstalk, which determine signal-to-noise ratio (SNR). To minimize degradation of photo sensitivity, back-side illumination (BSI), which collects light at the back side, is

👥 作者与机构

Yitae Kim, Wonchul Choi, Donghyuk Park, Heegeun Jeoung,