A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-LineLayer Technology

📋 论文概要

本文提出了一种基于96字线层技术的1.33Tb 4-bit/单元3D NAND闪存，通过增加层数和每单元存储位数大幅提升存储密度和容量，满足大容量存储需求。

💡 主要创新点

• 采用96个字线层（96-WL）技术，实现了业界领先的存储密度。
• 实现4-bit/单元（QLC）操作，使每个存储单元存储4位数据，显著提升容量。
• 设计优化了读/写电路和算法，确保96层QLC的可靠性和性能。

🏷 关键词

📄 原文摘要

M. Miakashi1, Y. Nagadomi1, T. Nakano1, T. Kawabe1, T. Shibuya1, M. Sako1, K. Yanagidaira1, T. Hashimoto1, H. Date1, M. Sato1, T. Nakagawa1, H. Takamoto1, J. Musha1, T. Minamoto1, M. Uda1, D. Nakamura1, K. Sakurai1, T. Yamashita1, J. Zhou1, R. Tachibana1, T. Takagiwa1, T. Sugimoto1, M. Ogawa1, Y. Ochi1, K. Kawaguchi1, M. Kojima1, T. Ogawa1, T. Hashiguchi1, R. Fukuda1, M. Masuda1, K. Kawakami1, T. Someya1, Y. Kajitani1, Y. Matsumoto1, N. Morozumi1, J. Sato1, N. Raghunathan2, Y. L. Koh2, S. Chen2, J. Lee2, H. Nasu2, H. Sugawara2, K. Hosono1, T. Hisada1, T. Kaneko1, H. Nakamura1 Toshiba Memory, Yokohama, Japan Western Digital, Milpitas, CA 1 2 Since 3D-Flash memory took over for 2D-Flash memory, chip capacity has continuously improved [1-3]. In the 2D-Flash era, 2b/cell (MLC) offered higher performance and reliability, while a 3b/cell (TLC) offered the lowest cost. Thanks to a larger feature size, 3D Flash cell reliability is much better than that of 2D. As a

👥 作者与机构

N. Shibata1, K. Kanda1, T. Shimizu1, J. Nakai1, O. Nagao1, N. Kobayashi1,