A 3.6Mb 10.1Mb/mm2 Embedded Non-Volatile ReRAM Macro in 22nm FinFET Technology with Adaptive Forming/Set/Reset Schemes Yielding Down to 0.5V with Sensing Time of 5ns at 0.7V

📋 论文概要

该论文提出了一种在22nm FinFET工艺中实现的3.6Mb嵌入式非易失ReRAM宏单元，具有10.1Mb/mm2的最高子阵列密度。通过自适应形成/设置/复位方案和材料创新，实现了低电压切换，为物联网和汽车应用的SoC提供了低成本、抗磁干扰的存储解决方案。

💡 主要创新点

• 采用了自适应形成/设置/复位方案，优化ReRAM单元的编程可靠性，降低功耗。
• 通过材料创新和标称栅极FinFET逻辑器件，实现了低电压切换，同时达到了10.1Mb/mm2的高密度。

🏷 关键词

📄 原文摘要

Tanaya Sahu, Juan Alzate-vinasco, Ajay Vangapaty, Mesut Meterelliyoz, Nathan Strutt, Albert B. Chen, Patrick Hentges, Pedro A. Quintero, Chris Connor, Oleg Golonzka, Kevin Fischer, Fatih Hamzaoglu Intel, Hillsboro, OR A resistive RAM (ReRAM) macro is developed as a low-cost, magnetic-disturbimmune option for embedded, non-volatile memory for SoCs used in IoT and automotive applications. We demonstrate the smallest ReRAM subarray density of 10.1Mb/mm2 in a 22nm low-power process. The subarray uses nominal-gate FINFET logic devices, with material innovations to allow low-voltage switching without impacting transistor reliability. Prior art features larger bit cell size or array density, and uses 28 or 40nm technology nodes [1-4]. The smallest readsense time (tSENSE = 5ns@0.7V) is demonstrated, compared to previous works [2]. An optimized pulse-width (PW) voltage-current write-verify-write (PVC-WVW)

👥 作者与机构

Pulkit Jain, Umut Arslan, Meenakshi Sekhar, Blake C. Lin, Liqiong Wei,