A 7Mb STT-MRAM in 22FFL FinFET Technology with 4ns Read Sensing Time at 0.9V Using Write-Verify-Write Scheme and Offset-Cancellation Sensing Technique

📋 论文概要

该论文提出了一种采用写-验证-写（WvW）方案和偏移补偿技术的7Mb STT-MRAM，在22FFL FinFET工艺上实现了0.9V电压下4ns的读取感应时间，解决了嵌入式非易失性存储器在速度、密度和成本方面的挑战。

💡 主要创新点

• 提出写-验证-写（WvW）方案，通过迭代写入和验证提高STT-MRAM的写入可靠性。
• 采用偏移补偿技术，降低读取路径的失调电压，实现4ns快速读取感应。
• 在22FFL FinFET工艺上集成7Mb容量，展示了高密度嵌入式MRAM的可行性。

🏷 关键词

📄 原文摘要

Nilanjan Das, Kevin Fischer, Tahir Ghani, Oleg Golonzka, Patrick Hentges, Rawshan Jahan, Pulkit Jain, Blake Lin, Mesut Meterelliyoz, Jim O’Donnell, Conor Puls, Pedro Quintero, Tanaya Sahu, Meenakshi Sekhar, Ajay Vangapaty, Chris Wiegand, Fatih Hamzaoglu Intel, Hillsboro, OR STT-MRAM has been emerging as a very-promising high-density embedded nonvolatile memory (eNVM) [1, 2]. Embedded Flash memory has been the leading eNVM technology, but STT-MRAM has been developed as a better solution for continuing scaling, speed and cost. This paper presents a write-verify-write (WvW) scheme and a programmable offset cancellation sensing technique that achieves a high-yield, high-performance and high-endurance 7Mb STT-MRAM arrays in a 22FFL FinFET technology [3]. The developed technology supports a wide range of operating temperatures between -40 - 105°C. Compared to priorart [4,5], the two-stage current-sensing technique with a die-by-die tuning of a

👥 作者与机构

Liqiong Wei, Juan G. Alzate, Umut Arslan, Justin Brockman,