⚡ 本页包含 AI 生成的分析内容,仅供参考
该论文提出了一种基于SRAM的位串行计算内存架构,支持整数和浮点运算,用于可编程的向量加速。解决了传统模拟内存计算对PVT敏感且需要昂贵ADC/DAC转换的问题。
factors in the energy and performance of both general purpose CPUs and GPUs. This has led to extensive research focused on in-memory computing, which moves computation to where the data is located. With this approach, computation is often performed on the memory bit-lines in the analog domain using current summing [1-3], which requires expensive analog-to-digital and digital-to-analog conversions at the array boundary. In addition, such analog computation is very sensitive to PVT variations, limiting precision. More recently, full-rail (digital) binary in-memory computing was proposed to avoid this conversion overhead and improve robustness [4, 5]. However, both prior in-memory approaches suffer from the same major limitations: they accelerate only one type of algorithm and are inherently restricted to a very
Jingcheng Wang, Xiaowei Wang, Charles Eckert, Arun Subramaniyan,
Reetuparna Das, David Blaauw, Dennis Sylvester University of Michigan, Ann Arbor, MI Data movement and memory bandwidth are dominant