⚡ 本页包含 AI 生成的分析内容，仅供参考
本文提出一种基于130nm 16MHz FRAM的微控制器，集成了亚1μA的嵌入式压电应变传感器和模拟前端，实现了超低功耗运动检测，解决了物联网中高效传感的需求。
Nagaraj Krishnasawamy1, Hadi Najar2, Suman Bellary2, Wei-Yan Shih1, Scott Summerfelt1, Steven Bartling1 Texas Instruments, Dallas, TX Texas Instruments, Santa Clara, CA 1 2 Ultra-low Power Microcontrollers (MCUs) [1-4] have played a central role in embedded IoT systems providing programmability, analog and digital processing and control, A/D interfaces, and power management. As IoT applications expand, efficient sensing is increasingly becoming part of MCUs. In this paper we present a 130nm 16MHz Ferro-electric RAM (FRAM) based MCU with a sub-1uA embedded piezo-electric strain sensor and AFE for ULP motion detection (Fig. 17.4.1). To our knowledge, this is the first reported MCU with an embedded motion detection strain sensor. Existing applications that would benefit from such a MCU are applications like toys and remote controls that can turn off while not in use. Motion detection in a key fob improves security by preventing a “man in the middle” attack while the key
Sudhanshu Khanna1, Michael Zwerg1, Brian Elies1, Juergen Luebbe1,