← 返回论文列表 📄 下载原文 PDF  ISSCC 2019 · 19.5
ISSCC 2019Session 19 · ADAPTIVE DIGITAL & CLOCKING TECHNIQUESDigital Circuits10nm FinFET CMOS

Digital Leakage Compensation for a Low-Power and LowJitter 0.5-to-5GHz PLL in 10nm FinFET CMOS Technology

⚡ 本页包含 AI 生成的分析内容,仅供参考

📋 论文概要

该论文针对10nm FinFET工艺中模拟PLL因泄漏电流导致的静态相位误差、抖动和参考杂散问题,提出了一种数字泄漏补偿技术。实现了0.5-5GHz宽带低功耗低抖动PLL,在消除泄漏影响的同时保持低功耗和低抖动特性。

💡 主要创新点

工艺节点
10nm FinFET CMOS
重要性
发表年份
ISSCC 2019

🏷 关键词

数字泄漏补偿低抖动PLL低功耗10nm FinFET宽带PLL

📄 原文摘要

loop (PLL) design [1] continues in the 10nm node and beyond, the leakage from various sources could become an issue in the applications where the reference clock frequency is low and the static phase error is required to be close to zero at all process corners and temperatures. The impacts of leakage currents on analog PLLs are the increase of static phase error, higher jitter and reference spur. To mitigate the leakage sensitivity in analog PLL designs, digital PLLs have been designed [2-3], but they often exhibit higher power consumption and higher jitter due to quantization noise, and require high-performance voltage regulators or supply-noise cancellation techniques [4] due to their high sensitivity to powersupply noise. To compensate for the leakage current in analog PLLs, analog

👥 作者与机构

Yongping Fan, Bo Xiang, Dan Zhang, James S. Ayers,

Kuan-Yueh James Shen, Andrey Mezhiba Intel, Hillsboro, OR As the push for low-power, low-jitter, and low-area phase-locked

分类:Digital Circuits · 年份:ISSCC 2019