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ISSCC 2019Session 20 · NOISE-SHAPED & VCO-BASED ADCsData Converters14nm FinFET

A 40MHz-BW 320MS/s Passive Noise-Shaping SAR ADC with Passive Signal-Residue Summation in 14nm FinFET

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📋 论文概要

本文提出了一种40MHz带宽、320MS/s的被动噪声整形SAR ADC,采用被动信号-残差求和技术,在14nm FinFET工艺中实现。该设计无需有源运放,通过被动方式实现噪声整形,有效降低比较器噪声和量化噪声,满足802.11 ac/ax标准对60-70dB SNR的需求。

💡 主要创新点

核心指标
40MHz带宽, 320MS/s采样率
工艺节点
14nm FinFET
重要性
发表年份
ISSCC 2019

🏷 关键词

被动噪声整形SAR被动信号残差求和14nm FinFET

📄 原文摘要

applications due to their low power and small area. SNR of 60-70dB is necessary to meet the noise budget for the downlink chain in the 802.11 ac/ax standards. Comparator noise and quantization noise are typically the dominant noise sources limiting the SNR. Recently, noiseshaping SAR (NS-SAR) ADCs have become popular to increase SNR by reducing these two noise sources through noise shaping. Active NS-SAR, first introduced in [1], uses an opamp to amplify and integrate residue. With residue amplification, the active NS-SAR achieves a noise transfer function (NTF) equivalent to high order noise shaping by performing charge sharing multiple times [1]. NS-SAR ADCs (passive or active) usually require a comparator with an additional input differential pair for the residue, which contributes extra thermal and kickback noise. An error-feedback (EF) NS-SAR

👥 作者与机构

Ying-Zu Lin*, Chin-Yu Lin*, Shan-Chih Tsou, Chih-Hou Tsai, Chao-Hsin Lu

MediaTek, Hsinchu, Taiwan *Equally-Credited Authors (ECAs) SAR ADCs are popular in mobile WiFi

分类:Data Converters · 年份:ISSCC 2019