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ISSCC 2019Session 20 · NOISE-SHAPED & VCO-BASED ADCsData Converters28nm CMOS

A 76.6dB-SNDR 50MHz-BW 29.2mW Noise-CouplingAssisted CT Sturdy MASH ΔΣ Modulator with 1.5b/4b Quantizers in 28nm CMOS

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📋 论文概要

该论文提出了一种基于噪声耦合辅助的Sturdy MASH结构的连续时间ΔΣ调制器,采用1.5b/4b量化器组合,在28nm CMOS工艺下实现了76.6dB SNDR、50MHz带宽和29.2mW功耗,解决了宽带高分辨率模数转换中的能效问题。

💡 主要创新点

核心指标
76.6dB SNDR @ 50MHz BW, 29.2mW
工艺节点
28nm CMOS
重要性
发表年份
ISSCC 2019

🏷 关键词

连续时间ΔΣ调制器噪声耦合Sturdy MASH多比特量化器

📄 原文摘要

Rui P. Martins1,3, Maurits Ortmanns2 University of Macau, Macau, China, University of Ulm, Ulm, Germany 3 Instituto Superior Tecnico/University of Lisboa, Lisbon, Portugal 1 2 The demands for wider cellular bandwidth (BW) drive the development of continuous time (CT) ΔΣ modulators (DSMs). Oversampling ratio (OSR) is generally restricted due to high signal BW. To obtain an adequate resolution while maintaining good power efficiency, CT DSMs generally need to achieve an aggressive noise shaping and employ a multibit quantizer (QTZ) [1-3]. Though multibit operation requires a highly linear feedback (FB) DAC, dictating sophisticated linearization techniques [1-3]. Multi-stage noise-shaping (MASH) topologies can be employed to increase the order and they can apply multibit quantization only in the latter stages, where linearity requirements are highly relaxed. However, MASH DSMs suffer from quantization noise (QN) leakage due

👥 作者与机构

Liang Qi1, Ankesh Jain2, Dongyang Jiang1, Sai-Weng Sin1,

分类:Data Converters · 年份:ISSCC 2019