⚡ 本页包含 AI 生成的分析内容，仅供参考
本文提出一种电压和温度跟踪的SRAM辅助技术，通过支持740mV双轨偏移来提升SRAM在低功耗和高性能应用中的鲁棒性。该技术旨在克服传统SRAM编译器在宽电压和温度范围内的性能退化问题。
Changnam Park, Dongwook Seo, Jaesung Choi, Jaeyoung Kim, Hoon Kim, Jungmyung Kang, Sunyung Jang, Daeyoung Moon, Sangshin Han, Taehyung Kim, Jaehyun Lim, Younghwan Park, Hyejin Hwang, Jeonseung Kang, Jaeseung Choi, Taejoong Song Samsung Electronics, Hwaseong, Korea Embedded SRAM is a key component that typically determines the overall processor performance. A fully customized SRAM requires a long design cycle; hence, an SRAM compiler that can provide a wide range of user-specified SRAM designs, by utilizing predefined leaf cells, is widely used. An SRAM compiler must exhibit robustness across a wide range of voltage and temperature conditions. On top of optimizing power and performance for a variety of applications, a compiler also enables dynamic voltage and frequency scaling. However, the temperature and voltage sensitivity of an SRAM bitcell limits its voltage and temperature operating range, thus significantly degrading read and write stability.
Inhak Lee, Hanwool Jeong, Sangyeop Baeck, Siddharth Gupta,