⚡ 本页包含 AI 生成的分析内容,仅供参考
本文提出了一种基于PAM-4的4通道复用和级联CDR电路的环形拓扑上行-下行接口,实现了25.6Gb/s的数据速率,解决了传统NAND接口在带宽和容量之间的权衡问题。
Yuji Satoh, Makoto Morimoto, Rui Ito, Mitsuyuki Ashida, Yuta Tsubouchi, Mai Nozawa, Go Urakawa, Jun Deguchi Toshiba Memory, Kawasaki, Japan High-bandwidth (BW) and large-capacity storage systems with NAND Flash memory (hereinafter referred to as “NAND”) have been increasingly required for big data applications, such as the field of advanced biomedical science [1]. However, a conventional NAND interface (I/F), e.g. Toggle DDR, with multi-drop bus topology has a tradeoff between BW and capacity due to the large load capacitance of NAND packages (PKGs). Although increasing the number of parallelized lanes of Toggle DDR improves both BW and capacity, it costs a large number of pins/wires on a controller/PCB. In order to overcome these problems, a daisy-chained serial I/F has been proposed [2]. In the I/F, bridge chips mask large load capacitance of NAND PKGs seen from a controller’s transmitter (TX)
Takashi Toi, Junji Wadatsumi, Hiroyuki Kobayashi, Yutaka Shimizu,