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ISSCC 2019Session 4 · POWER AMPLIFIERSAI / MLSiGe HBT

A Highly Linear High-Power 802.11ac/ax WLAN SiGe HBT Power Amplifier Using a Compact 2nd-Harmonic-Shorting Four-Way Transformer and Integrated Thermal Sensors proposed four-way transformer achieves simultaneous fundamental and 2ndharmonic impedance matching with the efficient parallel power combining capability.

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📋 论文概要

本文提出了一种用于802.11ac/ax WLAN的高线性高功率SiGe HBT功率放大器,采用紧凑的二次谐波短路四路变压器结构,解决了高功率下的线性度问题,并通过电热补偿技术提高了热稳定性。

💡 主要创新点

工艺节点
SiGe HBT
重要性
发表年份
ISSCC 2019

🏷 关键词

功率放大器802.11ac/axSiGe HBT二次谐波短路线性度

📄 原文摘要

Mark Doherty2, John D. Cressler1 The electro-thermal behavior of the output stage is described in Fig. 4.4.3. The thermal sensor QREF is located between two SiGe HBT arrays QP/QN in a symmetrical fashion to sense and track their TJ. Other elements in the bias circuit are kept far away from QP/QN to minimize mutual thermal coupling. Due to complementary-to-absolute-temperature characteristic of QREF, the base voltage VB decreases with increased power dissipation in QP/QN, which helps maintain their collector current and slow the β drop with increasing TJ. Simulations were performed using a layout-based thermal model provided by the process design kit. Average TJ of QP with thermally coupled QREF is lower by 12°C than thermally decoupled case at 24dBm. Since the bias circuit is operated in a closed loop, an insufficient bandwidth of the bias circuit can cause a static memory effect. Simulated normalized 1dB-gain bandwidth of the bias circuit is 300MHz, covering

👥 作者与机构

Inchan Ju1, Mike McPartlin2, Chun-Wen Paul Huang2, Clifford DY Cheon1,

分类:AI / ML · 年份:ISSCC 2019