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本文提出了一种用于802.11ac/ax WLAN的高线性高功率SiGe HBT功率放大器,采用紧凑的二次谐波短路四路变压器结构,解决了高功率下的线性度问题,并通过电热补偿技术提高了热稳定性。
Mark Doherty2, John D. Cressler1 The electro-thermal behavior of the output stage is described in Fig. 4.4.3. The thermal sensor QREF is located between two SiGe HBT arrays QP/QN in a symmetrical fashion to sense and track their TJ. Other elements in the bias circuit are kept far away from QP/QN to minimize mutual thermal coupling. Due to complementary-to-absolute-temperature characteristic of QREF, the base voltage VB decreases with increased power dissipation in QP/QN, which helps maintain their collector current and slow the β drop with increasing TJ. Simulations were performed using a layout-based thermal model provided by the process design kit. Average TJ of QP with thermally coupled QREF is lower by 12°C than thermally decoupled case at 24dBm. Since the bias circuit is operated in a closed loop, an insufficient bandwidth of the bias circuit can cause a static memory effect. Simulated normalized 1dB-gain bandwidth of the bias circuit is 300MHz, covering
Inchan Ju1, Mike McPartlin2, Chun-Wen Paul Huang2, Clifford DY Cheon1,