A 32×32-Pixel 0.9THz Imager with Pixel-Parallel 12b VCO-Based ADC in 0.18μm CMOS

📋 论文概要

该论文提出了一种基于0.18μm CMOS工艺的32×32像素0.9THz成像器，每个像素集成了12位VCO型ADC实现并行读出，解决了太赫兹成像中低成本和像素级高精度数字化的问题。

💡 主要创新点

• 首次在0.9THz频段实现了32×32像素规模与像素级并行12位VCO型ADC的集成，避免了传统架构的读出瓶颈。
• 利用VCO型ADC在像素内完成直接数字转换，降低了高频噪声干扰并提高了转换效率。
• 基于标准CMOS工艺实现低成本太赫兹探测器，兼顾了高空间分辨率和穿透性检测需求。

🏷 关键词

📄 原文摘要

characteristics of signals in the terahertz band (100GHz to 10THz) located between the millimeter wave band and the infrared band. In particular, terahertz waves have higher spatial resolution than mm-waves. Moreover, they can transmit through various substances such as plastics, fibers and paper, and can detect hazardous substances. Because of these features, interest in terahertz applications such as security screening is rising. However, there is a paucity of lowcost terahertz detectors. The Si-CMOS process technology is low-cost and highly integratable with readout electronics and on-chip signal processors. A key consideration for many of the terahertz-detector technologies is the need for additional process steps to make them compatible with CMOS technologies [1].

👥 作者与机构

Sayuri Yokoyama1, Masayuki Ikebe1, Yuri Kanazawa1, Takahiro Ikegami1,

Prasoon Ambalathankandy1, Shota Hiramatsu1, Eiichi Sano1, Yuma Takida2, HIroaki Minamide2 Hokkaido University, Sapporo, Japan RIKEN, Sendai, Japan 1 2 There are many compelling