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ISSCC 2019Session 9 · HIGH-FREQUENCY TRANSCEIVERS FOR RADAR AND COMMUNICATIONSmm-Wave22nm FinFET CMOS

A Scalable 71-to-76GHz 64-Element Phased-Array Transceiver Module with 2×2 Direct-Conversion IC in 22nm FinFET CMOS Technology

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📋 论文概要

该论文提出一种可扩展的64单元相控阵收发模块,工作在71-76GHz频段,采用22nm FinFET CMOS工艺集成的2×2直接转换IC,用于5G毫米波通信,解决高频段天线孔径和链路预算问题。

💡 主要创新点

工艺节点
22nm FinFET CMOS
重要性
发表年份
ISSCC 2019

🏷 关键词

毫米波相控阵直接转换收发机22nm FinFET CMOS5G通信

📄 原文摘要

Somnath Kundu1, Abhishek Agrawal1, Peter Sagazio1, Brent Carlton1, Farhana Sheikh1, Arnaud Amadjikpe1, William Lambert3, Divya Shree Vemparala1, Mark Chakravorti1, Satoshi Suzuki1, Robert Flory1, Chris Hull1 Intel, Hillsboro, OR; 2Hillsboro, OR; 3Intel, Chandler, AZ 1 Fifth-generation cellular communication standards (5G) target Gb/s data-rates, pushing the industry beyond the sub-6GHz bands. Tens of GHz of spectrum are available in the frequency bands from 30 to 300GHz. To maintain acceptable link budgets with sufficient antenna apertures, arrays are typically required at these frequencies and electrical beam steering is needed to retain spatial coverage. For such complex systems, highly-integrated, low-cost and energy-efficient SoCs are desirable to enable volume deployment. FinFET technologies are an ideal candidate to tackle this challenging integration, given the excellent balance between density

👥 作者与机构

Stefano Pellerano1, Steven Callender1, Woorim Shin1, Yanjie Wang2,

分类:mm-Wave · 年份:ISSCC 2019