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ISSCC 2020Session 10 · HIGH-PERFORMANCE TRANSCEIVERSRF & Wireless12nm FinFET

A 4G/5G Cellular Transmitter in 12nm FinFET with Harmonic Rejection

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📋 论文概要

该论文提出了一种支持4G/5G多模多频段的蜂窝发射机,采用12nm FinFET工艺,通过谐波抑制技术解决了宽带宽和宽调谐范围下的高线性度挑战。

💡 主要创新点

工艺节点
12nm FinFET
重要性
发表年份
ISSCC 2020

🏷 关键词

4G/5G蜂窝发射机谐波抑制

📄 原文摘要

Radio (NR) technology provides much higher data rate and system capacity compared to 4G LTE. This is achieved, among other techniques, by increasing the maximum channel bandwidth per component carrier (CC) from 20MHz in LTE to 100 MHz in NR and by introducing new frequency bands in the range of 3.3 to 5GHz [1]. A 4G/5G multimode multiband cellular transceiver must support this wide bandwidth and wide tuning range while maintaining excellent EVM for high-order modulation and high linearity and low noise for challenging LTE scenarios. One high-linearity TX design challenge is the stringent third-order counter intermodulation (CIM3, fLO-3fBB) required to meet out-of-band (OOB) emission specs while transmitting a single resource block (RB). The situation becomes

👥 作者与机构

Ming-Da Tsai1, Chien-Wei Tseng1, Kuen-Jou Tsai1, Shuja Andrabi2,

Pin-Cheng Huang1, Federico Beffa3, Yangjian Chen3, Bernard Tenbroek3 MediaTek, Hsinchu, Taiwan, 2MediaTek, Cambridge, United Kingdom MediaTek, Kent, United Kingdom 1 3 5G New

分类:RF & Wireless · 年份:ISSCC 2020