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该论文介绍了一款在22nm工艺上实现的32Mb嵌入式STT-MRAM，具备10ns读取速度、超过100万次写入耐久性和在150°C下10年数据保持能力，解决了传统嵌入式闪存的速度和耐久性瓶颈。
Interference Yu-Der Chih, Yi-Chun Shih, Chia-Fu Lee, Yen-An Chang, Po-Hao Lee, Hon-Jarn Lin, Yu-Lin Chen, Chieh-Pu Lo, Meng-Chun Shih, Kuei-Hung Shen, Harry Chuang, Tsung-Yung Jonathan Chang TSMC, Hsinchu, Taiwan STT-MRAM is a promising solution for next-generation embedded non-volatile memory (NVM), supporting a wide range of applications. Compared to traditional embedded Flash [1-2], STT-MRAM is a CMOS-compatible low-temperature backend-of-the-line (BEOL) memory, requiring only 2-to-5 extra masks. It is a byte-alterable NVM with excellent write speed, write endurance (>1M cycles), and high-temperature data retention capability. In this work, a 32Mb STT-MRAM using a 0.0456µm2 bit cell is fabricated using a 22nm ultra-low leakage (ULL) CMOS process. A WL-voltage generation system, with distributed local constant-current kickers, and power-gating switches is used to overdrive the WL to achieve a higher
Speed, 1M Cycle Write Endurance, 10 Years Retention, at 150°C and High Immunity to Magnetic Field