A 1.1V 16GB 640GB/s HBM2E DRAM with a Data-Bus Window-Extension Technique and a Synergetic On-Die ECC Scheme

📋 论文概要

本文提出了一种1.1V 16GB 640GB/s的HBM2E DRAM，通过数据总线窗口扩展技术和协同片上ECC方案，解决了高带宽内存中数据窗口缩小和可靠性问题。

💡 主要创新点

• 提出数据总线窗口扩展技术，通过优化时序和信号完整性提升数据有效窗口。
• 引入协同片上ECC方案，结合纠错编码和冗余管理，提高内存可靠性并降低功耗。

🏷 关键词

📄 原文摘要

So-Young Kim, Yesin Ryu, Jaewon Park, Sinho Kim, Sanguhn Cha, Donghak Shin, Jungyu Lee, Jong-Pil Son, Byung-Kyu Ho, Seong-Jin Cho, Beomyong Kil, Sungoh Ahn, Baekmin Lim, Yongsik Park, Kijun Lee, Myung-Kyu Lee, Seungduk Baek, Junyong Noh, Jae-Wook Lee, Seungseob Lee, Sooyoung Kim, Botak Lim, Seouk-Kyu Choi, Jin-Guk Kim, Hye-In Choi, Hyuk-Jun Kwon, Jun Jin Kong, Kyomin Sohn, Nam Sung Kim, Kwang-Il Park, Jung-Bae Lee Samsung Electronics, Hwaseong, Korea Rapidly evolving artificial intelligence (AI) technology, such as deep learning, has been successfully deployed in various applications: such as image recognition, health care, and autonomous driving. Such rapid evolution and successful deployment of AI technology have been possible owing to the emergence of accelerators, such as GPUs and TPUs, that have a higher data throughput. This, in turn, requires an enhanced memory system with large capacity and high

👥 作者与机构

Chi-Sung Oh, Ki Chul Chun, Young-Yong Byun, Yong-Ki Kim,