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ISSCC 2020Session 24 · RF & mm-WAVE POWER AMPLIFIERSAI / ML

A 24-to-30GHz Watt-Level Broadband Linear Doherty Power Amplifier with Multi-Primary Distributed-ActiveTransformer Power-Combining Supporting 5G NR FR2 64-QAM with >19dBm Average Pout and >19% Average PAE

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📋 论文概要

该论文提出了一种24-30GHz瓦级宽带线性Doherty功率放大器,采用多初级分布式有源变压器功率合成技术,解决了5G毫米波用户设备中因天线阵列数量受限而需要高输出功率的问题。

💡 主要创新点

重要性
发表年份
ISSCC 2020

🏷 关键词

Doherty功率放大器毫米波5G分布式有源变压器宽带

📄 原文摘要

The continuous worldwide demand for multi-Gb/s data-rate has driven the rapid development and standardization of 5G New Radio (NR) specifications in the mmwave bands [1-3]. As a result, there is a surge of interest in high-performance yet compact mm-wave 5G front-end chipsets to enable large-aperture phased arrays. In User Equipment (UE) devices, the limited form factor restricts the number of antenna array elements, e.g., 2×2, which dramatically increases the output power (Pout) requirement per element [1,4]. For base stations, although some applications require only moderate element Pout and high antenna gain, high Pout capabilities allow array-divisions/sub-arrays for concurrent multi-stream mmwave links. However, generating high Pout at mm-wave necessitates high-efficiency power amplifiers (PAs) and judicious power combining in low-breakdown silicon processes. A few silicon high-power (>26dBm Pout) mm-wave PAs have been

👥 作者与机构

Fei Wang, Hua Wang

Georgia Institute of Technology, Atlanta, GA

分类:AI / ML · 年份:ISSCC 2020