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本文提出了一款基于16nm FinFET CMOS工艺的D波段功率放大器，采用双路功率合成技术实现了紧凑设计。该放大器解决了从平面28nm CMOS向FinFET技术过渡带来的毫米波设计挑战，在110-170GHz频段实现了15dBm饱和输出功率和12.8%的峰值功率附加效率。
The drive for higher data-rates has led to the allocation of the spectrum above 100GHz for D-band communication. A high level of integration in a nm-CMOS technology is necessary to keep the cost low and allow for efficient high-speed baseband and DSP circuits. However, the transition from a planar 28nm to a digital FinFET technology, such as 16nm FinFET, poses extra design challenges for mmwave power amplifiers. A solution to these design challenges is proposed in this work and resulted in a D-band 16nm FinFET CMOS power amplifier with a peak gain of 25.6dB, Psat of 15dBm, and PAEmax of 12.8% for an area of only 0.062mm2. There are 3 fundamental limits that impede the design of a 140GHz power amplifier in a FinFET technology. The first limit is a decreased mm-wave performance due to increase in parasitic capacitance and interconnect resistance for the lower metals and gate electrodes. As a large transistor width is needed to
Bart Philippe, Patrick Reynaert
KU Leuven, Leuven, Belgium