⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文提出了一种W波段功率放大器，采用分布式共源GaN HEMT结构和4路Wilkinson-Lange合路器，实现了6W输出功率，解决了传统并联晶体管在金属互连方面的限制问题。
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing, China 1 2 W-band power amplifiers (PAs) play an important role in Gb/s-data-rate wireless communication, imaging, and radar applications. Traditionally, multiple transistors are connected in parallel to maximize the output power. Though the active area, including gate width and number of fingers, can be scaled up to generate large transistors, the metallic inter-connection is not suitable for scaling due to random shape and magnetic coupling. Thus, an accurate device model should be investigated by separating the scalable and the non-scalable parts. In additional, the maximum output power of the PA is known to be limited by intrinsic characteristics of power transistor, such as maximum current density, breakdown voltage, and parasitic element. Compared to silicon-based technology, GaN PAs are able to operate at higher voltages and frequencies, thereby reducing loss and
Weibo Wang1,2, Fangjin Guo2, Tangsheng Chen2, Keping Wang1
Tianjin University, Tianjin, China