⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文提出了一种12英寸CMOS X射线探测器，实现了5.2M像素和88.4dB动态范围。采用16位列并行连续时间ΔΣ ADC替代传统PGA+ADC架构，避免了PGA的高功耗和大面积问题，且无需多次X射线曝光，从而在保持高分辨率的同时实现了宽动态范围。
a full image depth even for a specific region of interest, and require high resolution, low noise, and wide DR in a wafer-scale detector [1-4]. To achieve a wide DR, a large integration capacitor is required within the pixel to prevent its saturation at high dose, but this degrades image quality at low dose. To facilitate wide DR (>70dB), a conventional detector uses a column-parallel readout with a programmable gain amplifier (PGA) and an ADC [3]. However, the PGA consumes substantially more power and area than the ADC, and its gain control requires multiple X-ray exposures. The use of switched-capacitor (SC) ∆Σ ADC provides wide DR with an improved noise performance [2,5]. However, its SC input draws high peak current that must be supplied by pixels and reference drivers, and its
Sangwoo Lee1, Jinwoong Jeong2, Taewoong Kim1, Chanmin Park1,
Taewoo Kim2, Youngcheol Chae1 Yonsei University, Seoul, Korea, 2Rayence, Hwaseong, Korea 1 CMOS X-ray detectors used in industrial and medical equipment should provide