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该论文提出了一种工作在0.59THz的波束可调相干辐射器阵列,采用40nm CMOS工艺实现了1mW的辐射功率和24.1dBm的等效全向辐射功率(EIRP),解决了硅基技术在太赫兹频段输出功率不足的问题,为低成本、高集成度的太赫兹成像系统提供了可行的信号源方案。
In THz imaging systems, signal sources are needed to provide illumination of objects. In several reported imaging systems working at 0.3THz, 0.62THz, and 0.81THz, an output power around 1mW is required to achieve an acceptable dynamic range [1]. In these systems, the THz signal is generated using III-V devices and waveguide assemblies, which are expensive and bulky. In contrast, CMOS technologies have the advantages of compact size, low cost, and high integration. Until recently, 1mW radiated power has not been achieved at frequencies higher than 0.35THz in silicon technologies. Besides high output power, beam-steering ability of a signal source is also essential as it can replace bulky and slow mechanical beam-steering approaches often found in THz imaging systems [1]. In this paper, a 0.59THz beam-steerable coherent-radiator array is presented in 40nm CMOS. Combining 36 coherent radiators in a 0.68mm2 area,
Kaizhe Guo, Patrick Reynaert
KU Leuven, Leuven, Belgium