⚡ 本页包含 AI 生成的分析内容,仅供参考
该论文提出了一种基于亚太赫兹CMOS的分子时钟,利用高阶旋转跃迁探测和槽阵列技术,实现了43ppt的长期稳定性,解决了传统晶振/MEMS振荡器长期老化与温度敏感性问题,适用于5G基站等高精度时间同步场景。
Future ultra-broadband and low-latency radio access networks pose stringent specifications for time synchronizations. For 5G base stations, inter-site timing error should be <130ns for carrier aggregation and <10ns for high-accuracy positioning [1], requiring a 10-10-level relative drift for a 1min clock holdover. Meanwhile, massive deployments of compact access nodes also make small size, power, and cost indispensable for clocks. Oven-controlled crystal/MEMS oscillators (OCXO/OCMO) with moderate cost are currently used. But, their resonators exhibit long-term aging and high-temperature sensitivity (-31ppm/K for MEMS resonators), hence requiring up to a watt-level heater power for temperature stabilization. Referencing clocks to invariant physical constants well solves the drifting issue. To this end, chip-scale atomic (Cs or Rb) clocks (CSACs) [2-4] have achieved outstanding stability, low power (120mW in [3]) and
Cheng Wang, Xiang Yi, Mina Kim, Ruonan Han
Massachusetts Institute of Technology, Cambridge, MA