An Up-to-1400nm 500MHz Demodulated Time-ofFlight Image Sensor on a Ge-on-Si Platform

📋 论文概要

本文提出了一种基于Ge-on-Si平台的间接飞行时间图像传感器，工作波长可达1400nm，调制频率500MHz，解决了长波长下响应度低和调制速度慢的问题。

💡 主要创新点

• 采用Ge-on-Si异质集成平台，实现1400nm长波长的ToF检测，提升室外抗背景光能力。
• 在500MHz高频调制下实现解调，同时保持较高的响应度。
• 通过优化像素设计，克服了长波长与高速调制之间的权衡。

🏷 关键词

📄 原文摘要

C.-F. Liang*, S.-S. Su, M.-J. Yang, C.-Y. Chen, S.-L. Cheng, H.-D. Liu, C.-T. Lin, K. P. Petrov, H.-W. Chen, K.-C. Chu, P.-C. Wu, P.-T. Huang, N. Na, S.-L. Chen Artilux, Hsinchu, Taiwan, *Equally-Credited Authors (ECAs) Indirect time-of-flight (iToF) image sensors on silicon platforms [1-3] are attracting rising attention because of their better immunity to background light and potential to achieve higher pixel resolution. Shifting the laser wavelength to 940nm [3] may further improve the outdoor performance but at a cost of reduced responsivity and lower modulation speed. As shown in red in Fig. 5.3.1, the solar irradiance at 940nm is only one-fourth of the case at 850nm, and it keeps going down with increasing wavelength and even vanishes at ~1350nm. To further increase the system SNR, using larger laser power is a feasible choice, but this introduces a laser safety issue [4]. The maximum permissible exposure (MPE) at

👥 作者与机构

C.-L. Chen*, S.-W. Chu*, B.-J. Chen*, Y.-F. Lyu*, K.-C. Hsu*,