A 2.1e- Temporal Noise and -105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology

📋 论文概要

该论文提出了一种背照式电压域全局快门图像传感器，采用2.3μm像素，实现了2.1e-的时域噪声和-105dB的寄生光灵敏度，解决了全局快门图像传感器在低噪声和高寄生光抑制方面的挑战。

💡 主要创新点

• 采用电压域全局快门架构，实现了低时域噪声和高寄生光灵敏度抑制。
• 通过背照式像素设计，在2.3μm小像素尺寸下保持了优异的性能。

🏷 关键词

📄 原文摘要

Taehyoung Kim, Jungchan Kyoung, Dongmo Im, Jinyong Choi, KeunYeong Cho, Daehoon Kim, Haemin Lim, Min-Woong Seo, JuYoung Kim, Doowon Kwon, Jiyoun Song, Jiyoon Kim, Minho Jang, Joosung Moon, HyunChul Kim, Chong Kwang Chang, JinGyun Kim, Kyoungmin Koh, HanJin Lim, JungChak Ahn, Hyeongsun Hong, Kyupil Lee, Ho-Kyu Kang Samsung Electronics, Hwaseong, Korea As the automotive and AI industries are expanding rapidly, global-shutter (GS) image sensors are playing a more significant role in the perception system. More specifically, GS image sensors are required in various fields involving IR, including the face-ID in mobile devices, the driver monitoring system in automotive applications, and factory automation. GS image sensors are necessary for these applications because they can capture freeze-frame images without motion distortion due to their advantage in the pixel operation method. The simultaneous

👥 作者与机构

Jae-kyu Lee, Seung Sik Kim, In-Gyu Baek, Heesung Shim, Taehoon Kim,