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ISSCC 2020Session 5 · IMAGERS AND ToF SENSORSImage Sensors

A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology

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📋 论文概要

该论文介绍了一款1/2.65英寸、44M像素的CMOS图像传感器,采用0.7µm像素单元,并使用了先进的全深度深沟槽隔离技术。该传感器旨在满足智能手机摄像头对高像素数和小像素尺寸的需求,解决了在小像素下保持图像质量的问题。

💡 主要创新点

重要性
发表年份
ISSCC 2020

🏷 关键词

CMOS图像传感器0.7µm像素全深度深沟槽隔离44M像素智能手机摄像头

📄 原文摘要

Joo Hyoung Kim, Dongsuk Cho, Taehun Lee, Changkyu Lee, Haeyong Park, Soojin Hong, Chongkwang Chang, Jingyun Kim, Hanjin Lim, Youngsun Oh, Yitae Kim, Seungjoo Nah, Sangill Jung, Jaekyu Lee, JungChak Ahn, Hyeongsun Hong, Kyupil Lee, Ho-Kyu Kang Samsung Electronics, Hwaseong, Korea As the smart mobile device market continues to grow and the number of cameras per device rapidly increases, demand for CMOS image sensors (CIS) also increases. Two major trends in mobile device cameras are: (1) adopting smaller pixels that enable greater pixel count at similar optical format, and (2) bigger pixels for higher image quality. To be more specific, front-facing cameras have a trend towards smaller pixels, while rear main cameras have a trend towards both smaller and bigger pixels. The optical format of front-facing cameras is especially limited due to existing bezel-less or border-less display designs, yet higher

👥 作者与机构

HyunChul Kim, Jongeun Park, Insung Joe, Doowon Kwon,

分类:Image Sensors · 年份:ISSCC 2020