A 132dB Single-Exposure-Dynamic-Range CMOS Image Sensor with High Temperature Tolerance

📋 论文概要

该论文提出了一种单次曝光动态范围达132dB的CMOS图像传感器，并具备高温度耐受性，适用于监控和汽车领域。通过创新像素结构和读出电路，解决了传统多曝光方法在动态范围和温度稳定性上的不足。

💡 主要创新点

• 采用单次曝光技术实现132dB超高动态范围，避免了多曝光带来的运动伪影和时序问题。
• 通过优化像素设计和温度补偿电路，实现了在宽温度范围内的稳定性能，提升了环境适应性。

🏷 关键词

📄 原文摘要

Tomohiko Asatsuma1, Yuki Hattori1, Takayuki Yamanaka2, Ryoichi Yoshikawa2, Naoki Kawazu1, Tomohiro Matsuura1, Takahiro Iinuma1, Takahiro Toya1, Tomohiko Watanabe2, Atsushi Suzuki1, Yuichi Motohashi1, Junichiro Azami1, Yasushi Tateshita1, Tsutomu Haruta1 Sony Semiconductor Solutions, Atsugi, Japan, Sony Semiconductor Manufacturing, Kikuyo, Japan 1 2 Dynamic range is becoming a key performance parameter for CMOS image sensors (CISs), especially for the surveillance and automotive fields. Several wellknown multi-exposure methods are widely used to expand dynamic range (DR). However, those methods cause issues such as motion artifacts and light emitting diode (LED) flickering with the composite images. Therefore, the single-exposure method is critical to the quality of high-DR images. The most obvious way to expand single-exposure DR is by employing in-pixel capacitors. One of the most well-known technologies with in-pixel capacitors is the lateral overflow integration

👥 作者与机构

Yorito Sakano1, Takahiro Toyoshima1, Ryosuke Nakamura1,