An 8Gb/s/µm FFE-Combined Crosstalk-Cancellation Scheme for HBM on Silicon Interposer with 3D-Staggered Channels

📋 论文概要

该论文针对硅中介层上HBM的高密度通道间串扰问题，提出了一种结合前馈均衡（FFE）的串扰消除方案，并采用3D交错通道布局，实现了8Gb/s/µm的高吞吐量。该方案有效提升了通道密度而不显著增加功耗。

💡 主要创新点

• 提出将前馈均衡（FFE）与串扰消除技术相结合，在硅中介层上实现高密度通道间的干扰抑制。
• 采用3D交错通道布局，进一步减少相邻信道间的串扰，提高信道利用率。

🏷 关键词

📄 原文摘要

a silicon interposer technology to increase the number of I/O pins. Interfaces with the silicon interposer provide a higher throughput (Gb/s/µm) than other packaging technologies due to the high channel density. To increase the throughput further, either the per-pin data rate or the channel density should be increased. Since increasing the per-pin data rate requires a complex and powerhungry circuitry, increasing the channel density is an effective way to achieve the high throughput. However, a main problem with reducing the channel pitch is the crosstalk (XT) between adjacent lanes [1]. If the channels are stacked vertically for high channel density, the vertically adjacent channels become additional XT sources. There have been many research reports on the XT cancellation (XTC)

👥 作者与机构

Han-Gon Ko, Soyeong Shin, Jonghyun Oh, Kwanseo Park, Deog-Kyoon Jeong

Seoul National University, Seoul, Korea To meet the demand for high memory bandwidth, high-bandwidth memory (HBM) uses