A 105Gb/s Dielectric-Waveguide Link in 130nm BiCMOS Using Channelized 220-to-335GHz Signal and Integrated Waveguide Coupler

📋 论文概要

该论文提出了一种基于介质波导的105Gb/s链路，利用220-335GHz信道化信号和集成波导耦合器，在130nm BiCMOS工艺中实现，旨在替代传统铜基电链路，解决高速数据传输中的功耗和成本问题。

💡 主要创新点

• 首次在130nm BiCMOS中实现超过100Gb/s的介质波导链路，利用220-335GHz信道化信号提升带宽利用率。
• 集成波导耦合器设计，实现高效信号耦合，降低封装和布线复杂度。

🏷 关键词

📄 原文摘要

Raytheon, Tewksbury, MA 3 Intel, Chandler, AZ 1 The rapid surge of data transmission within computation, storage and communication infrastructures is pushing the speed boundary of traditional copper-based electrical links. Recent realizations of 100Gb/s wired links require advanced FinFET technologies, highcost packaging/cables and power-consuming equalization. High-frequency waves over dielectric waveguides have been considered as an alternative solution that exploits the low-loss, broadband medium while maintaining compatibility with existing silicon IC platforms. However, since its debut in 2011 [1], this scheme, previously using ≤140GHz carriers, has only achieved data rates of up to 36Gb/s [2]. It is expected that higher carrier frequencies (e.g. >200GHz) and multi-channel aggregation would further increase the data rate while shrinking the interconnect size; but that scheme has been hindered

👥 作者与机构

Jack W. Holloway1,2, Georgios C. Dogiamis3, Ruonan Han1

Massachusetts Institute of Technology, Cambridge, MA