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本文提出了一种60GHz四核基波压控振荡器(VCO),利用环形三耦合变压器实现多核耦合,并消除了模式模糊问题,在65nm CMOS工艺中达到了186.5dBc/Hz的优值(FoM),满足了5G通信对毫米波本振低相位噪声的严格要求。
The recent development of the 5th-generation (5G) communication sytems has set increasingly strict requirements on the spectral purity of millimeter-wave (mm-wave) local oscillators (LO). Low phase noise is crucial to enable advanced modulation formats for high communication data-rates. Much effort has been made to improve the phase noise performance of the mm-wave LOs. A lower frequency voltage-controlled oscillator (VCO) together with a frequency multiplier can lower the phase noise [1]; however, the high-order harmonic components in VCOs are usually very weak, which requires additional power-consuming mm-wave amplification stages to satisfy the LO swing requirement. For single mm-wave fundamental VCOs, the minimal achievable phase noise is bounded by the smallest realizable inductor that displays a high Q factor. To avoid the “small inductor” problem, N oscillators with relatively large inductors can be
Haikun Jia, Wei Deng, Pingda Guan, Zhihua Wang, Baoyong Chi
Tsinghua University, Beijing, China