A 300GHz-Band Phased-Array Transceiver Using Bi-Directional Outphasing and Hartley Architecture in 65nm CMOS

📋 论文概要

本文提出了一种工作在300GHz频段的相控阵收发机，采用双向outphasing和Hartley架构，在65nm CMOS工艺中实现。通过TX和RX模式下不同的LO相位生成方案，解决了太赫兹频段相控阵的波束控制问题。

💡 主要创新点

• 提出双向outphasing和Hartley架构，实现300GHz频段相控阵收发机的TX和RX模式切换。
• 采用45°、90°、45°三级移相器，分别用于波束方向控制和混频器所需的LO相位差，支持outphasing TX和Hartley RX。

🏷 关键词

📄 原文摘要

Chenxin Liu1, Kiyoshi Yanagisawa1, Ashbir Aviat Fadila1, Jian Pang1, Hiroshi Hamada2, Hideyuki Nosaka2, Atsushi Shirane1, Kenichi Okada1 Tokyo Institute of Technology, Tokyo, Japan NTT, Kanagawa, Japan 1 The LO phase generation differs between TX mode and RX mode. The LO chain schematic is illustrated in Fig. 22.2.3. The first phase shifter has a 45° coverage and it sets the total LO phase to control the beam direction of the phased array. The next two phase shifters provide the required 90° and 45° LO phase shifts between the two mixers to enable the outphasing TX mode and the Hartley RX mode, respectively. The quadruplers extend the 45° range to 180°, which translates to a full 360° range at the subharmonic mixer output. The measured phase-shifter coverage at 30GHz is shown in Fig. 22.2.3. 120GHz LO buffers are designed for higher gain and output power by adding a positive feedback path for the single-ended stages, and by applying neutralization for

👥 作者与机构

Ibrahim Abdo1, Carrel da Gomez1, Chun Wang1, Kota Hatano1, Qi Li1,