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本文提出一个0.42THz相干收发系统,采用40nm CMOS工艺,实现了10dBm EIRP和27dB NF,用于相位对比成像,解决了硅基集成THz相位检测的难题。
The small wavelength and non-ionizing nature of EM waves in the THz spectrum make this frequency band attractive for high-resolution imaging applications. While amplitudebased THz imaging systems have already been demonstrated in Silicon [1], an integrated solution for phase detection in this frequency range has not been reported so far. Detecting the phase change of THz waves passing through the imaged object would enable applications like high-precision thickness measurement and dielectric permittivity characterization. Furthermore, phase-contrast imaging techniques allow scanning of weakly absorbing materials, such as soft tissues and polymers, where amplitude-based scanners are incapable of providing clear pictures [2]. However, the mentioned applications demand high phase-detection accuracy, imposing strict SNR requirements on THz phase imagers for real-time operation. The main SNR limitation of such systems
Dragan Simic, Kaizhe Guo, Patrick Reynaert
KU Leuven - MICAS, Leuven, Belgium