A 605GHz 0.84mW Harmonic Injection-Locked Receiver Achieving 2.3pW/√Hz NEP in 28nm CMOS

📋 论文概要

该论文提出了一种工作在605GHz的谐波注入锁定接收机，采用28nm CMOS工艺实现，功耗仅0.84mW。通过谐波注入锁定技术解决了太赫兹频段CMOS接收机灵敏度低的难题，实现了2.3pW/√Hz的噪声等效功率(NEP)。

💡 主要创新点

• 采用谐波注入锁定架构，在605GHz频段实现低功耗高灵敏度太赫兹信号检测
• 通过优化注入锁定机制和电路设计，在28nm CMOS中实现0.84mW极低功耗与2.3pW/√Hz的NEP性能
• 针对太赫兹成像传感应用，克服了CMOS工艺在fmax以上效率低的挑战

🏷 关键词

📄 原文摘要

The use of THz signals for imaging and sensing, enabling numerous applications in object characterization, medical, security, and other fields, has gained large interest in recent years. Both THz transmitters and receivers have been successfully implemented in commercial CMOS technologies, bringing numerous advantages: low cost, the possibility of integration with standard digital logic, and high yield. Nevertheless, efficient power generation in silicon technologies is still a challenge above the maximum frequency of oscillation (fmax). Therefore, improving the sensitivity of terahertz detectors is crucial. As fmax in CMOS is saturating, new circuit architectures are required for efficient and sensitive THz detection. So far, Schottky Barrier Diodes and self-mixing MOSFETs have been the most successful topologies in CMOS above 500GHz, attaining noise-equivalent powers (NEP) around 10pW/√Hz [5-9]. The presented work breaks this

👥 作者与机构

Ariane De Vroede, Patrick Reynaert

KU Leuven - MICAS, Leuven, Belgium