A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022µm2 Cell Size Using Self-Adaptive Delayed Termination and MultiCell Reference

📋 论文概要

本文在14nm FinFET工艺上实现了一款1Mb嵌入式1T1R RRAM，单元尺寸仅为0.022µm²。针对RRAM的读取和写入可靠性问题，提出了自适应性延迟终止技术和多单元参考技术，有效提升了存储器的性能。

💡 主要创新点

• 提出自适应性延迟终止技术，根据工艺和电压变化动态调整写入终止时间，提高写入可靠性。
• 采用多单元参考技术，利用多个参考单元提供更精确的读取参考电压，增强读取容限。

🏷 关键词

📄 原文摘要

Lab, Hangzhou, China 3 Fudan University, Shanghai, China 1 2 High-density embedded nonvolatile memory (eNVM) at advanced technology nodes is still in great demand for SOC chips used in consumer electronics, self-driving cars, industrial control, and IoT edge devices. Although embedded NOR Flash is still main stream, its process complexity and high integration cost make it difficult to scale beyond 28nm. RRAM has become a promising alternative owing to its excellent scalability, low power, and compatibility with logic processes [1-6]. However, several challenges still exist that restrict RRAM from practical eNVM applications, as shown in Fig. 24.2.1. 1) a high supply voltage is needed, because of high operation voltages and a considerable voltage drop on write path. 2) The IR drop on write path varies significantly with the

👥 作者与机构

Jianguo Yang1,2, Xiaoyong Xue3, Xiaoxin Xu1, Qiao Wang1, Haijun Jiang2,

Jie Yu1, Danian Dong1, Feng Zhang1, Hangbing Lv1, Ming Liu1 Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China Zhejiang