An 8Gb GDDR6X DRAM Achieving 22Gb/s/pin with Single-Ended PAM4 Signaling

📋 论文概要

本文提出了一款8Gb GDDR6X DRAM，采用单端PAM4信令实现了22Gb/s/pin的数据传输速率。通过创新信号编码和电路设计，解决了高带宽内存接口的功耗和信号完整性挑战。

💡 主要创新点

• 首次在GDDR6X DRAM中采用单端PAM4信令，将每引脚速率提升至22Gb/s。
• 通过优化的均衡和时钟电路，在有限功耗预算内实现了超高数据率下的可靠通信。

🏷 关键词

📄 原文摘要

Wolfgang Spirkl2, Martin Bach2, Mani Balakrishnan2, Stefan Dietrich2, Fabien Funfrock2, Milena Ivanov2, Natalija Jovanovic2, Maksim Kuzmenka2, Daniel Lauber2, Juan Ocon-Garrido2, David Ovard1, Karl Pfefferl2, Sven Piatkowski2, Gabriele Piscopo2, Manfred Plan2, Jens Polney2, Jan Pottgiesser2, Stephan Rau2, Filippo Vitale2, Marc Walter2, Marcos Alvarez-Gonzalez2, Martin Broschwitz2, Cristian Chetreanu2, Andrea Sorrentino2, Joerg Weller2, Peter Mayer2, Michael Richter2, Casto Salobrena Garcia2, Andreas Schneider2, Shih Nern Wong3 Micron Technology, Boise, ID Micron Semiconductor, Munich, Germany 3 Micron Semiconductor, Singapore, Singapore 1 2 Several factors drive the demand for DRAM bandwidth scaling: in addition to established applications in visualization, there has been a proliferation of data-intensive applications enabled by advancements in AI, ML and advanced driver-assistance systems (ADAS)

👥 作者与机构

Timothy M. Hollis1, Ronny Schneider2, Martin Brox2, Thomas Hein2,