A mm-Wave Power Amplifier for 5G Communication Using a Dual-Drive Topology Exhibiting a Maximum PAE of 50% and Maximum DE of 60% at 30GHz

📋 论文概要

提出了一种双驱动拓扑的毫米波功率放大器，用于5G通信，实现了50%的最大功率附加效率（PAE），解决了毫米波频段高效率和高线性度需求的矛盾。

💡 主要创新点

• 采用双驱动拓扑结构，在不增加复杂度的前提下提升功率回退效率。
• 通过多谐波终端优化和拓扑改进，克服了先进硅工艺低电压下的性能瓶颈。

🏷 关键词

📄 原文摘要

The mm-wave spectrum is opening a new opportunity for TRx systems to operate at high-Gb/s data-rates. However, this opportunity is also imposing stringent requirements for power amplifiers (PAs) in terms of efficiency and linearity. To this date, all PA designs focus on increasing the peak/power-back-off (PBO) PAE and output power (max Pout) by either presenting multi-harmonic terminations or improving on existing topologies, such as stacked, outphasing, and Doherty PAs [1-3]. However, in highly scaled silicon processes with low supply voltages, these reported techniques see diminishing returns on PAE and Pout since the transistor knee voltage (Vknee) becomes a significant portion of the supply voltage [5]. Moreover, an extra reduction in supply voltage is often performed in practical deployment to ensure device reliability. This is especially relevant for mm-wave array operations, where array element couplings result in substantial

👥 作者与机构

Edgar Felipe Garay, David Joseph Munzer, Hua Wang

Georgia Institute of Technology, Atlanta, GA