⚡ 本页包含 AI 生成的分析内容,仅供参考
提出一种基于VCO的无失真传感器数字前端,解决了可穿戴传感器中运动伪影导致的大动态范围和线性度挑战,实现了178.9dB FoM和128dB SFDR,且无需校准。
Motion and stimulation artifacts encountered in wearable sensors present difficult dynamic range (DR) and linearity challenges: AFEs need to be able to resolve μV-level signals in the presence of artifacts up to 100s of mV in amplitude while maintaining linearity without saturation, such that the signal of interest can be readily recovered during post-processing. Since it is not possible to build an amplifier with appreciable gain and linearity for >100mV inputs under <1V SoC-compatible supply, most high-DR AFEs instead incorporate an LNA into a ∆$-based ADC-direct architecture [1-3]. However, as many emerging wearable devices desire single-chip integration in scaled CMOS for size and digital performance considerations, conventional ∆$Ms, which rely on voltage-domain building blocks, suffer from reduced intrinsic gain and headroom. Instead, time-domain quantization through VCO-based AFEs benefits from scaled CMOS
Jiannan Huang, Patrick P. Mercier
University of California, San Diego, CA