⚡ 本页包含 AI 生成的分析内容，仅供参考
本文介绍了一款512Gb、3b/cell的第七代3D-NAND闪存，实现了184MB/s的写入吞吐量和2.0Gb/s的接口速度。该设计通过改进的编程算法和高速接口技术，解决了大容量存储中写入性能与数据速率提升的挑战。
Bong-Kil Jung, Jaedoeg Lyu, Hogil Lee, Won-Tae Kim, Hongsoo Jeon, Sunghoon Kim, In-Mo Kim, Jae-Ick Son, Kyoungtae Kang, Sang-Won Shim, JongChul Park, Eungsuk Lee, Kyung-Min Kang, Sang-Won Park, Jaeyun Lee, Seung Hyun Moon, Pansuk Kwak, ByungHoon Jeong, Cheon An Lee, Kisung Kim, Junyoung Ko, Tae-Hong Kwon, Junha Lee, Yohan Lee, Chaehoon Kim, Myeong-Woo Lee, Jeong-yun Yun, HoJun Lee, Yonghyuk Choi, Sanggi Hong, JongHoon Park, Yoonsung Shin, Hojoon Kim, Hansol Kim, Chiweon Yoon, Dae Seok Byeon, Seungjae Lee, Jin-Yub Lee, Jaihyuk Song Samsung Electronics, Seoul, Korea The exponential data size growth in high-speed networks is a key motivator for nonvolatile memory development. To support this demand, higher density NAND is required: with a smaller cell size and higher interface speed. Generally, scaling down NAND technology requires addressing several common issues: 1) As the number of WL stack
Jiho Cho, D. Chris Kang, Jongyeol Park, Sang-Wan Nam, Jung-Ho Song,