← 返回论文列表 📄 下载原文 PDF  ISSCC 2021 · 30.4
ISSCC 2021Session 30 · NON-VOLATILE MEMORIESMemory170+字线层3D NAND工艺

A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology

⚡ 本页包含 AI 生成的分析内容,仅供参考

📋 论文概要

本文实现了一款1Tb容量的3D NAND闪存,采用每单元3比特(TLC)和170+字线层堆叠技术,显著提升了存储密度和容量,解决了大容量非易失性存储的需求。

💡 主要创新点

核心指标
1Tb容量, 3b/cell, 170+字线层
工艺节点
170+字线层3D NAND工艺
重要性
发表年份
ISSCC 2021

🏷 关键词

3D NAND闪存1Tb容量3b/cell170+字线层高密度存储

📄 原文摘要

Mitsuhiro Abe1, Teruo Takagiwa1, Yuki Shimizu1, Junji Musha1, Katsuaki Sakurai1, Jumpei Sato1, Tetsuaki Utsumi1, Kazuhide Yoneya1, Yasuhiro Suematsu1, Toshifumi Hashimoto1, Takeshi Hioka1, Kosuke Yanagidaira1, Masatsugu Kojima1, Junya Matsuno1, Kei Shiraishi1, Kensuke Yamamoto1, Shintaro Hayashi1, Tomoharu Hashiguchi1, Kazuko Inuzuka1, Akio Sugahara1, Mitsuaki Honma1, Keiji Tsunoda1, Kazumasa Yamamoto1, Takahiro Sugimoto1, Tomofumi Fujimura1, Mizuki Kaneko1, Hiroki Date1, Osamu Kobayashi1, Takatoshi Minamoto1, Ryoichi Tachibana1, Itaru Yamaguchi1, Juan Lee2, Venky Ramachandra2, Srinivas Rajendra2, Tianyu Tang2, Siddhesh Darne2, Jiwang Lee2, Jason Li2, Toru Miwa2, Ryuji Yamashita2, Hiroshi Sugawara2, Naoki Ookuma2, Masahiro Kano2, Hiroyuki Mizukoshi2, Yuki Kuniyoshi2, Mitsuyuki Watanabe2, Kei Akiyama2, Hirotoshi Mori2, Akira Arimizu2, Yoshito Katano2, Masakazu Ehama2, Hiroshi Maejima1, Koji Hosono1, Masahiro Yoshihara1

👥 作者与机构

Tsutomu Higuchi1, Takuyo Kodama1, Koji Kato1, Ryo Fukuda1, Naoya Tokiwa1,

分类:Memory · 年份:ISSCC 2021