⚡ 本页包含 AI 生成的分析内容,仅供参考
本文介绍了微软Xbox Series X游戏主机SoC,采用TSMC N7工艺集成153亿晶体管,实现GPU性能2倍、CPU性能3倍、能效2.4倍的提升,并显著增加内存和IO带宽以满足下一代游戏需求。
improvement over the prior generation with up to 2× GPU performance, 3× CPU performance, 2.4× GPU performance/W, 1.7× memory bandwidth and 2× IO bandwidth to feed the additional processing capability and features shown in Fig. 3.1.1. The chip is fabricated in TSMC’s N7 process node [6], containing 15.3B transistors on a 360.4mm2 die. It is packaged in a 52.5×52.5mm2 BGA using a 12-layer (5-2-5) substrate with 2963 balls and a 0.80mm minimum ball pitch. A die photo is shown in Fig. 3.1.7. The IO-limited chip floorplan is driven by DRAM connections on 3 sides of the chip. Figure 3.1.2 is a block diagram of the architecture (Xbox Velocity Architecture) of the XBOX Series X SoC. Two custom Zen2-based CPU core complexes are used, with each
Paul Paternoster1, Andy Maki2, Andres Hernandez2, Mark Grossman1,
Michael Lau1, David Sutherland2, Aditya Mathad3 Microsoft, Sunnyvale, CA Microsoft, Redmond, WA 3 AMD, Austin, TX 1 2 The XBOX Series X System-on-Chip (SoC) delivers an enormous