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ISSCC 2021Session 33 · HIGH-VOLTAGE, GaN AND WIRELESS POWERAI / ML

A 1.25W 46.5%-Peak-Efficiency Transformer-in-Package Isolated DC-DC Converter Using Glass-Based Fan-Out Wafer-Level Packaging Achieving 50mW/mm2 Power Density polyimide layers with a dielectric breakdown strength of >400V/μm are laminated among 3 RDLs to form isolation barriers, providing better than 5kV isolation rating. Consequently, the transformer achieves a coupling coefficient of 0.8, enabling over 1W power delivery.

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📋 论文概要

该论文提出一种基于玻璃基扇出晶圆级封装的隔离DC-DC转换器,在变压器封装内实现1.25W功率和46.5%峰值效率。针对传统AC耦合结构在高输入电压下栅驱动过压的问题,采用耐20V的LDMOS晶体管并改进耦合电路。

💡 主要创新点

核心指标
1.25W输出功率,46.5%峰值效率
重要性
发表年份
ISSCC 2021

🏷 关键词

隔离DC-DC转换器玻璃基扇出封装LDMOS

📄 原文摘要

Daquan Yu2, Ming Liu3, Lin Cheng1 Figure 33.5.3 shows the simplified schematic of the power stage. In the Tx, an LC tank oscillator with an AC-coupled structure is adopted. To handle a wide supply voltage (VDD) range of 3~6V for different working conditions, LDMOS transistors that can withstand 20V drain-source voltage are used to implement the power transistor M1,2. However, for the conventional AC-coupled structure with fixed coupling capacitors CP1,2, the gatedrive voltage (VGS1,2) of M1,2 will easily exceed the maximum voltage of 5V at high VDD, e.g., 6V. In this work, this issue is simply overcome by inserting MOS varactors CC1,2 into CP1,2. Since the capacitances of CC1,2 decreases quickly when VGS1,2 becomes larger than 4V, VGS1,2 can be well controlled to 5V even at 6-V VDD. In the Rx, full-bridge MOS rectifier is adopted to achieve high efficiency, and the AC-coupled structure is also

👥 作者与机构

Dongfang Pan1, Guolong Li1, Fangting Miao1, Biao Deng1, Junying Wei2,

分类:AI / ML · 年份:ISSCC 2021