⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文提出了一款基于14nm FinFET工艺的低功耗低成本射频集成电路，支持传统蜂窝网络和5G FR1频段。通过优化电流消耗和减少外部低噪声放大器及无源元件的使用，有效降低了BOM成本并延长了电池寿命。
Seunghoon Kang, Ikkyun Jo, Suseop Ahn, Jaeseung Lee, Jeongyeol Bae, Won Ko, Wonjun Jung, Sangho Lee, Sangsung Lee, Euiyoung Park, Sungjun Lee, Jeongkyun Woo, Jaehoon Lee, Yanghoon Lee, Kyungmin Lee, Jongwoo Lee, Thomas Byunghak Cho, Inyup Kang Samsung Electronics, Hwaseong, Korea To be competitive in a mobile market, current consumption and bill-of-material (BOM) cost have to be minimized. Current reduction techniques have been actively investigated as they become a key factor to increase battery lifetime. To reduce BOM cost, external low-noise amplifier (eLNA) usage and discrete passive components have to be minimized with simple interfaces, which influences the number of PCB layers and stacks. This work is oriented to provide a low-power and low-cost cellular RF transceiver that supports 2G, 3G, and 4G as well as new-radio (NR) frequency range1 (FR1) with a dual-mode Global Navigation Satellite System (GNSS) implemented in a 14nm FinFET CMOS
Jongsoo Lee, Byoungjoong Kang, Seongwon Joo, Seokwon Lee, Joongho Lee,