1/2.74-inch 32Mpixel-Prototype CMOS Image Sensor with 0.64µm Unit Pixels Separated by Full-Depth Deep-Trench Isolation

📋 论文概要

本文提出了一款1/2.74英寸32Mpixel原型CMOS图像传感器，采用0.64µm像素单元并通过全深度深沟槽隔离技术，解决了亚微米像素间串扰问题，实现了高分辨率成像。

💡 主要创新点

• 采用0.64µm超小像素单元，突破可见光衍射极限。
• 引入全深度深沟槽隔离（FD-DTI），有效抑制像素间光学和电学串扰。

🏷 关键词

📄 原文摘要

DongHyun Kim, Beomsuk Lee, SungIn Kim, Ho-Chul Ji, DongMo Im, Haeyong Park, Jinyoung Kim, JungHo Cha, Taehoon Kim, In-Sung Joe, Soojin Hong, Chongkwang Chang, Jingyun Kim, WooGwan Shim, Taehee Kim, Jamie Lee, Donghyuk Park, EuiYeol Kim, Howoo Park, Jaekyu Lee, Yitae Kim, JungChak Ahn, YoungKi Hong, ChungSam Jun, HyunChul Kim, Chang-Rok Moon, Ho-Kyu Kang Samsung Electronics, Hwaseong, Korea For years, there has been a strong drive for sub-micron pixel development, in spite of reaching the visible light diffraction limit, because a smaller pixel pitch of CMOS image sensors (CISs) is inevitably required for ever-miniaturizing camera modules as mobile devices incorporate more cameras, few of which are dedicated to ultra-high-resolution zoomed images [1]. To that end, image sensor vendors have tried to find new ways to avoid reduction in sensitivity and more crosstalk in the sensor through pixel architecture

👥 作者与机构

JongEun Park, Sungbong Park, Kwansik Cho, Taehun Lee, Changkyu Lee,