A 200 x 256 Image Sensor Heterogeneously Integrating a 2D Nanomaterial-Based Photo-FET Array and CMOS Time-to-Digital Converters

📋 论文概要

本文提出一款200×256像素的异构集成图像传感器，将基于MoS2二维纳米材料的光电FET阵列与CMOS时间数字转换器集成，采用脉宽调制模式通过光电流放电电容并计数时钟周期来测量光强，解决了二维材料光探测器与CMOS读出电路集成的问题，实现了76dB的动态范围。

💡 主要创新点

• 首次将基于MoS2的二维纳米材料光电FET阵列与CMOS时间数字转换器异构集成，实现像素级光强到数字时间的转换。
• 采用脉宽调制（PWM）模式，通过光电流放电电容并计数时钟周期，在76dB动态范围内实现高精度光强测量。

🏷 关键词

📄 原文摘要

voltage VINT. Upon light illumination, the photocurrent through the drain of the MoS2 photo-FET in a given pixel discharges CP, and a counter records the total number of clock cycles (nCLK), until the voltage across CP reaches a threshold (VREF, where VREF < VINT). Consequently, a brighter input—and thus, a larger photocurrent—will generate a smaller nCLK. A desired integration time (tINT) sets the maximum measurement time, after which CP is refreshed to VINT and the measurement starts anew for the next pixel. This PWM mode fully accommodates the measured 76dB bright/dark operating range of the MoS2 pixels. The total measurement range (minimum to maximum drain current) spanned by the combination of CP (1-to333pF) and tINT is 122.5dB.

👥 作者与机构

Henry Hinton1, Houk Jang1, Wenxuan Wu1, Min-Hyun Lee2, Minsu Seol2,

Hyeon-Jin Shin2, Seongjun Park2, Donhee Ham1 Harvard University, Cambridge, MA Samsung Advanced Institute of Technology, Suwon, Korea 1 2 In the PWM mode, CP is initially reset to