A 0.65V 1316µm2 Fully Synthesizable Digital Temperature Sensor Using Wire Metal Achieving 0.16nJ·%2-Accuracy FoM in 5nm FinFET CMOS

📋 论文概要

该论文提出了一种在5nm工艺下实现的全综合数字温度传感器，工作电压0.65V，面积仅1316µm²，通过利用金属线（Wire Metal）作为感测元件实现低功耗高精度。该传感器旨在解决SoC动态热管理中需要大量靠近热源的分布式温度传感器的问题，将感测部分直接插入逻辑区域作为远程探头。

💡 主要创新点

• 采用全综合设计方法，使得温度传感器可以像标准单元一样在数字设计流程中自动布局布线，大幅降低设计复杂度。
• 利用金属线（Wire Metal）作为感温元件，无需额外工艺步骤，实现0.65V低电压工作，并通过设计优化达到0.16nJ·%²的精度能耗乘积（FoM）。

🏷 关键词

📄 原文摘要

performance of SoCs, which is rapidly increasing overall chip temperature. As a result, dynamic thermal management (DTM) using a number of temperature sensors is essential. For accurate temperature measurement, the sensors should be placed close to heat sources. For this reason, although the main sensor is located outside the CPU, the sensing part is directly inserted into the logic in the form of remote probes, as shown in Fig. 13.6.1

👥 作者与机构

Junghyun Park, Jooseong Kim, Kwangho Kim, Jun-Hyeok Yang, Michael Choi, Jongshin Shin

Samsung Electronics, Gyeonggi, Korea Recently, the number of hot spots on chips has increased due to the high