⚡ 本页包含 AI 生成的分析内容，仅供参考
本文提出了一款192Gb容量、12层堆叠、带宽达896GB/s的HBM3 DRAM，通过TSV自动校准方案和基于机器学习的布局优化技术，解决了高带宽存储器中TSV信号完整性和布局效率问题。
Sangsic Yoon, Dong Uk Lee, Seokwoo Choi, Jihwan Park, Jinhyung Lee, Kyungjun Cho, Junil Moon, Byung-Kuk Yoon, Young-Jun Park, Sang-muk Oh, Chang Kwon Lee, Tae-Kyun Kim, Seong-Hee Lee, Hyun-Woo Kim, Yucheon Ju, Seung-Kyun Lim, Seung Geun Baek, Kyo Yun Lee, Sang Hun Lee, Woo Sung We, Seungchan Kim, Yongseok Choi, Seong-Hak Lee, Seung Min Yang, Gunho Lee, In-Keun Kim, Younghyun Jeon, Jae-Hyung Park, Jong Chan Yun, Chanhee Park, Sun-Yeol Kim, Sungjin Kim, Dong-Yeol Lee, Su-Hyun Oh, Taejin Hwang, Junghyun Shin, Yunho Lee, Hyunsik Kim, Jaeseung Lee, Youngdo Hur, Sangkwon Lee, Jieun Jang, Junhyun Chun, Joohwan Cho SK hynix, Icheon, Korea Ever since the introduction of high bandwidth memory (HBM DRAM) and its succeeding line-ups, HBM DRAM has been heralded as a prominent solution to tackle the memory wall problem. However, despite continual memory advancements the advent of high-end systems, including supercomputers, hyper-scale data centers and machine learning
Myeong-Jae Park, Ho Sung Cho, Tae-Sik Yun, Sangjin Byeon, Young Jun Koo,