A 16Gb 9.5Gb/s/pin LPDDR5X SDRAM with Low-Power Schemes Exploiting Dynamic Voltage-Frequency Scaling and Offset-Calibrated Readout Sense Amplifiers in a Fourth Generation 10nm DRAM Process

📋 论文概要

本文提出了一款16Gb容量、9.5Gb/s/pin数据速率的LPDDR5X SDRAM，通过动态电压频率缩放（DVFS）和偏移校准技术实现了低功耗运行，解决了高性能移动DRAM的功耗问题。

💡 主要创新点

• 采用动态电压频率缩放技术，根据工作负载动态调整电压和频率，降低功耗。
• 引入偏移校准方案，补偿信号路径中的偏差，提高数据接口的可靠性。

🏷 关键词

📄 原文摘要

Seokjin Cho, Kihan Kim, Seung-Hoon Oh, Hye-Yoon Joo, Geuntae Park, Jin-Hun Jang, Yong-Hun Kim, Donghun Lee, Jaehoon Jung, Yongmin Kwon, Youngjae Kim, Jaewoo Jung, Seongil O, Seoulmin Lee, Jaeseong Lim, Junho Son, Jisu Min, Haebin Do, Jaejun Yoon, Isak Hwang, Jinsol Park, Hong Shim, Seryeong Yoon, Dongyeong Choi, Jihoon Lee, Soohan Woo, Eunki Hong, Junha Choi, Jae-Sung Kim, Sangkeun Han, Jongmin Bang, Bokgue Park, Janghoo Kim, Seouk-Kyu Choi, Gong-Heum Han, Yoo-Chang Sung, Won-Il Bae, Jeong-Don Lim, Seungjae Lee, Changsik Yoo, Sang Joon Hwang, Jooyoung Lee Samsung Electronics, Hwaseong, Korea Mobile systems for 5G communications and emerging technologies, such as advanced driver assistance system (ADAS), augmented reality (AR), and artificial intelligence (AI), demand high-density, high-speed, and low-power DRAM. LPDDR5 has played an important role in such systems, by offering continuous improvements in memory density

👥 作者与机构

Dae-Hyun Kim, Byungkyu Song, Hyun-a Ahn, Woongjoon Ko, Sunggeun Do,