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ISSCC 2022Session 7 · NAND FLASH MEMORYMemory

A 512Gb In-Memory-Computing 3D-NAND Flash Supporting Similar-Vector-Matching Operations on Edge-AI Devices

⚡ 本页包含 AI 生成的分析内容,仅供参考

📋 论文概要

本文提出了一款512Gb的存内计算3D NAND闪存,支持相似向量匹配操作,适用于边缘AI设备。该设计在3D NAND中直接实现计算,解决了传统架构中数据移动的瓶颈,适用于人脸搜索和音频纹理等机器学习任务。

💡 主要创新点

核心指标
512Gb容量
重要性
发表年份
ISSCC 2022

🏷 关键词

存内计算3D NAND闪存相似向量匹配边缘AI

📄 原文摘要

Bo-Rong Lin1, Huai-Mu Wang1, Yen-Po Lin1, Yu-Chao Lin1, Chih-Chang Hsieh1, Chia-Ming Hu1, Yi-Ting Lai1, Han-Sung Chen1, Yuan-Hao Chang4, Hsiang-Pang Li1, Tei-Wei Kuo3,5, Keh-Chung Wang1, Meng-Fan Chang2, Chun-Hsiung Hung1, Chih-Yuan Lu1 Macronix, Hsinchu, Taiwan National Tsing Hua University, Hsinchu, Taiwan 3 National Taiwan University, Taipei, Taiwan 4 Academia Sinica, Taipei, Taiwan 5 City University of Hong Kong, Hong Kong, China 1 2 Similar-vector-matching (SVM) applications for unstructured vectors that are generated via machine-learning methods, such as face search and audio texturing from a dataset for access control systems, are frequently operated on edge devices, as depicted in Fig. 7.5.1. The SVM operation [1-3] typically comprises of (1) in the offline phase, the → and stored extracted raw vectors (VRAW) are obtained from machine learning approaches → in non-volatile NAND Flash; (2)

👥 作者与机构

Han-Wen Hu1,2, Wei-Chen Wang1,3, Chung-Kuang Chen1, Yung-Chun Lee1,

分类:Memory · 年份:ISSCC 2022