A 0.0078mm2 3.4mW Wideband Positive-Feedback-Based Noise-Cancelling LNA in 28nm CMOS Exploiting Gm Boosting

📋 论文概要

该论文提出了一种基于正反馈的噪声消除低噪声放大器（LNA），利用Gm增强技术实现宽带匹配和噪声抑制。在28nm CMOS工艺下，实现了0.0078mm²的极小面积和3.4mW的低功耗，适用于宽带接收机前端。

💡 主要创新点

• 提出正反馈噪声消除架构，通过辅助放大器消除主输入管的噪声，同时利用Gm增强技术提高增益和降低噪声因子。
• 在极小芯片面积(0.0078mm²)和低功耗(3.4mW)下实现宽带性能，适用于28nm CMOS工艺。

🏷 关键词

📄 原文摘要

γ/(gm2+gm3)RS. Accordingly, the noise factor of the LNA, F can be given by Zhe Liu, Chirn Chye Boon, Chenyang Li, Kaituo Yang, Yangtao Dong, Ting Guo Nanyang Technological University, Singapore, Singapore The noise figure (NF) of the low-noise amplifier (LNA), located at the forefront of wideband receivers, directly influences the total NF of the receiver. A popular approach to suppress the noise of the input transistor to decrease the LNA NF is to utilize a noisecancelling (NC) technique, where the main amplifier provides input matching, while the auxiliary amplifier removes the noise of the main amplifier [1]. In this scenario, the common-gate (CG) common-source (CS) NC LNA has been widely investigated because it features simultaneous noise and distortion cancellation. To achieve a NF of 3dB, the CG-CS LNA in [2] consumes 15.4mA. By employing the gm-boosting technique, a NF of 3.5dB is achieved in [3] while consuming 7.5mA. Benefiting from the current reuse

👥 作者与机构

feedforward paths, whose Gm is 2/RS without the current amplification of CM. When, AgmbiasRS=gm3/(gm2+gm3), the sum of FAF and FM2 achieves a minimum value of